Status : Verified
| Personal Name | Panghulan, Glenson R. |
|---|---|
| Resource Title | Characteristics of TiAlSiN thin films grown using the magnetized sheet plasma system |
| Date Issued | 14 December 2020 |
| Abstract | Quaternary nitride thin films such as titanium aluminum silicon nitride (TiAlSiN) have gained increasing interest due to its tribological properties. These films usually exhibit high hardness and good corrosion resistance. Hence, these hard coatings find a host of applications in the tool and die industry. In this work, sputter-deposited TiAlSiN thin films were synthesized using the magnetized sheet plasma system (MSPS). The MSPS is a locally-developed patented technology used for growing nitride thin films. To deposit the films, a multi-element target configuration was used to vary the sputtering yield of each element. This was achieved by varying the exposed area of the high purity metallic targets available for sputtering. By using different target configurations and various deposition parameters, the thin film composition and its subsequent properties can be varied. The growth of the films was achieved using admixtures of argon (Ar) and nitrogen (N2) at different partial pressure ratios as well as varying the plasma current. Optical emission spectral analysis revealed the presence of the first ionization of Ar (Ar-I) and the first positive system of N2 in the discharge. The N2 vibrational and translational temperatures increased as the Ar content was increased. Electron density increased as plasma current and Ar content was increased. Glancing incidence x-ray diffraction showed that AlTiN is the dominant phase with small amounts of TiN crystallites. AlTiN crystallite size decreased upon the addition of Si forming the TiAlSiN. In addition, Raman spectra revealed the presence of AlN and TiN crystal structures in the film. Morphological analysis showed an increase in roughness as plasma current and Ar content were increased. X-ray photoelectron spectroscopy showed the presence of oxides on the surface and silicon nitride (Si3N4) in the film. Elemental composition analysis showed that the films are mostly Al-rich attributed to the high sputtering yield of the Al tar |
| Degree Course | MS Materials Science and Engineering |
| Language | English |
| Keyword | Materials Science; Plasma; Reactive Sputtering; thin films; Coatings; TiAlSiN |
| Material Type | Thesis/Dissertation |
Preliminary Pages
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Category : I - Has patentable or registrable invention of creation.
Access Permission : Limited Access